Invention Grant
- Patent Title: Nonvolatile memory device with controlled word line setup time
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Application No.: US15351552Application Date: 2016-11-15
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Publication No.: US10388367B2Publication Date: 2019-08-20
- Inventor: Sang-Won Park , Dongkyo Shim , Kitae Park , Sang-Won Shim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2013-0111390 20130916
- Main IPC: G11C8/08
- IPC: G11C8/08 ; G11C11/56 ; G11C16/04 ; G11C16/08 ; G11C16/26 ; G11C16/34 ; G11C29/02
Abstract:
A nonvolatile memory device includes a voltage generator that sequentially provides a first setup voltage and second setup voltage to a word line of a memory cell array, and control logic including a time control unit that determines a word line setup time for the word line in relation to the second setup voltage based on a difference between the first and second setup voltages.
Public/Granted literature
- US20170062046A1 NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATION Public/Granted day:2017-03-02
Information query
