- 专利标题: Programmable logic applications for an array of high on/off ratio and high speed non-volatile memory cells
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申请号: US15591925申请日: 2017-05-10
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公开(公告)号: US10388374B1公开(公告)日: 2019-08-20
- 发明人: Mehdi Asnaashari , Hagop Nazarian , Lin Shih Liu
- 申请人: Crossbar, Inc.
- 申请人地址: US CA Santa Clara
- 专利权人: Crossbar, Inc.
- 当前专利权人: Crossbar, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Wegman, Hessler
- 主分类号: G11C13/00
- IPC分类号: G11C13/00 ; H01L27/24 ; H01L45/00 ; H04L12/861
摘要:
A non-volatile programmable circuit configurable to perform logic functions, is provided. The programmable circuit can employ two-terminal non-volatile memory devices to store information, thereby mitigating or avoiding disturbance of programmed data in the absence of external power. Two-terminal resistive switching memory devices having high current on/off ratios and fast switching times can also be employed for high performance, and facilitating a high density array. For look-up table applications, input/output response times can be several nanoseconds or less, facilitating much faster response times than a memory array access for retrieving stored data.
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