Invention Grant
- Patent Title: Substrate processing apparatus and substrate processing method
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Application No.: US14626277Application Date: 2015-02-19
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Publication No.: US10388544B2Publication Date: 2019-08-20
- Inventor: Akio Ui , Hisataka Hayashi , Takeshi Kaminatsui , Shinji Himori , Norikazu Yamada , Takeshi Ohse , Jun Abe
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Tokyo Electron Limited
- Current Assignee: Kabushiki Kaisha Toshiba,Tokyo Electron Limited
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2008-244260 20080924; JP2009-75135 20090325
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01J37/32 ; H01L21/3065 ; H01L21/311 ; H01L21/3213 ; H01L21/66

Abstract:
There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.
Public/Granted literature
- US20150162223A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD Public/Granted day:2015-06-11
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