- 专利标题： Apparatus for depositing a layer on a substrate in a processing gas
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申请号： US15273811申请日： 2016-09-23
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公开(公告)号： US10388559B2公开(公告)日： 2019-08-20
- 发明人: Sven Uwe Rieschl , Mohamed Elghazzali , Jurgen Weichart
- 申请人： Evatec AG
- 申请人地址： CH Trübbach
- 专利权人： EVATEC AG
- 当前专利权人： EVATEC AG
- 当前专利权人地址： CH Trübbach
- 代理机构： Pearne & Gordon LLP
- 主分类号： H01L21/687
- IPC分类号： H01L21/687 ; C23C14/50 ; C23C14/54 ; C23C16/458 ; C23C16/46 ; H01L21/285 ; H01L21/768 ; C23C16/50 ; C23C16/52 ; H01J37/32 ; H01J37/34 ; H01L21/67 ; H01L21/683
摘要：
Apparatus for depositing a layer on a substrate in a process gas includes a chuck containing a first surface for supporting the substrate, a clamp for securing the substrate to the first surface of the chuck, an evacuatable enclosure enclosing the chuck and the clamp and control apparatus. The evacuatable enclosure includes an inlet, through which the processing gas is insertable into the enclosure. The control apparatus is adapted to move at least one of the chuck and the clamp relative to, and independently of, one another to adjust a spacing between the chuck and the clamp during a single deposition process while maintaining a flow of the processing gas and a pressure within the enclosure that is less than atmospheric pressure.
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