Invention Grant
- Patent Title: Unmerged epitaxial process for FinFET devices with aggressive fin pitch scaling
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Application No.: US15343776Application Date: 2016-11-04
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Publication No.: US10388754B2Publication Date: 2019-08-20
- Inventor: Xiuyu Cai , Kangguo Cheng , Ali Khakifirooz , Ruilong Xie , Tenko Yamashita
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES INC.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES, INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES, INC.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L29/66 ; H01L29/06 ; H01L29/78 ; H01L29/10 ; H01L21/3065 ; H01L21/308 ; H01L21/3105 ; H01L21/8234 ; H01L27/088
Abstract:
Semiconductor devices and methods for making the same includes conformally forming a first spacer on multiple fins. A second spacer is conformally formed on the first spacer, the second spacer being formed from a different material from the first spacer. The fins are etched below a bottom level of the first spacer to form a fin cavity. Material from the first spacer is removed to expand the fin cavity. Fin material is grown directly on the etched fins to fill the fin cavity.
Public/Granted literature
- US20170117276A1 UNMERGED EPITAXIAL PROCESS FOR FINFET DEVICES WITH AGGRESSIVE FIN PITCH SCALING Public/Granted day:2017-04-27
Information query
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