Invention Grant
- Patent Title: Memory cells and methods of forming memory cells
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Application No.: US15334186Application Date: 2016-10-25
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Publication No.: US10388871B2Publication Date: 2019-08-20
- Inventor: Shuichiro Yasuda , Noel Rocklein , Scott E. Sills , Durai Vishak Nirmal Ramaswamy , Qian Tao
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.
Public/Granted literature
- US20170040534A1 Memory Cells and Methods of Forming Memory Cells Public/Granted day:2017-02-09
Information query
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