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    Memory cells and methods of forming memory cells
    2.
    发明授权
    Memory cells and methods of forming memory cells 有权

    公开(公告)号：US10923658B2

    公开(公告)日：2021-02-16

    申请号：US16440718

    申请日：2019-06-13

    Applicant: Micron Technology, Inc.

    Inventor： Shuichiro Yasuda ,  Noel Rocklein ,  Scott E. Sills ,  Durai Vishak Nirmal Ramaswamy ,  Qian Tao

    IPC: H01L45/00

    Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.

    Memory Cells and Methods of Forming Memory Cells
    3.
    发明申请
    Memory Cells and Methods of Forming Memory Cells 审中-公开

    公开(公告)号：US20190296235A1

    公开(公告)日：2019-09-26

    申请号：US16440718

    申请日：2019-06-13

    Applicant: Micron Technology, Inc.

    Inventor： Shuichiro Yasuda ,  Noel Rocklein ,  Scott E. Sills ,  Durai Vishal Nirmal Ramaswamy ,  Qian Tao

    IPC: H01L45/00

    Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.

    Memory cells and methods of forming memory cells
    4.
    发明授权
    Memory cells and methods of forming memory cells 有权

    公开(公告)号：US10388871B2

    公开(公告)日：2019-08-20

    申请号：US15334186

    申请日：2016-10-25

    Applicant: Micron Technology, Inc.

    Inventor： Shuichiro Yasuda ,  Noel Rocklein ,  Scott E. Sills ,  Durai Vishak Nirmal Ramaswamy ,  Qian Tao

    IPC: H01L45/00

    Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.

    Memory cells and methods of forming memory cells
    5.
    发明授权
    Memory cells and methods of forming memory cells 有权
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US09508931B2

    公开(公告)日：2016-11-29

    申请号：US14584504

    申请日：2014-12-29

    Applicant: Micron Technology, Inc.

    Inventor： Shuichiro Yasuda ,  Noel Rocklein ,  Scott E. Sills ,  Durai Vishal Nirmal Ramaswamy ,  Qian Tao

    IPC: H01L45/00 ,  H01L21/8229 ,  H01L27/112

    CPC classification number: H01L45/1616 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

    Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.

    Abstract translation: 一些实施例包括形成存储器单元的方法。 开关区域的第一部分形成在第一电极上。 使用原子层沉积在第一部分上形成开关区域的第二部分。 第二部分是与第一部分不同的组成。 在开关区域上形成离子源区。 在离子源区域上形成第二电极。 一些实施例包括具有在一对电极之间的切换区域的存储单元。 开关区域被配置为在低电阻状态和高电阻状态之间可逆地转变。 开关区域包括两个或更多个离散部分，其中一个部分不具有与在高电阻状态下直接抵抗它的任何组成成分相同的非氧分量。

    Memory Cells and Methods of Forming Memory Cells
    7.
    发明申请
    Memory Cells and Methods of Forming Memory Cells 审中-公开
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US20170040534A1

    公开(公告)日：2017-02-09

    申请号：US15334186

    申请日：2016-10-25

    Applicant: Micron Technology, Inc.

    Inventor： Shuichiro Yasuda ,  Noel Rocklein ,  Scott E. Sills ,  Durai Vishak Nirmal Ramaswamy ,  Qian Tao

    IPC: H01L45/00

    CPC classification number: H01L45/1616 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

    Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.

    Abstract translation: 一些实施例包括形成存储器单元的方法。 开关区域的第一部分形成在第一电极上。 使用原子层沉积在第一部分上形成开关区域的第二部分。 第二部分是与第一部分不同的组成。 在开关区域上形成离子源区。 在离子源区域上形成第二电极。 一些实施例包括具有在一对电极之间的切换区域的存储单元。 开关区域被配置为在低电阻状态和高电阻状态之间可逆地转变。 开关区域包括两个或更多个离散部分，其中一个部分不具有与在高电阻状态下直接抵抗它的任何组成成分相同的非氧分量。

    Memory Cells and Methods of Forming Memory Cells
    10.
    发明申请
    Memory Cells and Methods of Forming Memory Cells 有权
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US20150140776A1

    公开(公告)日：2015-05-21

    申请号：US14584504

    申请日：2014-12-29

    Applicant: Micron Technology, Inc.

    Inventor： Shuichiro Yasuda ,  Noel Rocklein ,  Scott E. Sills ,  Durai Vishal Nirmal Ramaswamy ,  Qian Tao

    IPC: H01L45/00

    CPC classification number: H01L45/1616 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

    Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.

    Abstract translation: 一些实施例包括形成存储器单元的方法。 开关区域的第一部分形成在第一电极上。 使用原子层沉积在第一部分上形成开关区域的第二部分。 第二部分是与第一部分不同的组成。 在开关区域上形成离子源区。 在离子源区域上形成第二电极。 一些实施例包括具有在一对电极之间的切换区域的存储单元。 开关区域被配置为在低电阻状态和高电阻状态之间可逆地转变。 开关区域包括两个或更多个离散部分，其中一个部分不具有与在高电阻状态下直接抵抗它的任何组成成分相同的非氧分量。

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