Invention Grant
- Patent Title: Power semiconductor device and snubber circuit thereof
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Application No.: US15903710Application Date: 2018-02-23
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Publication No.: US10389230B2Publication Date: 2019-08-20
- Inventor: Saijun Mao , Stefan Schroeder , Jingkui Shi , He Xu , Marius Michael Mechlinski , Bo Qu , Zhihui Yuan , Yingqi Zhang , Jie Shen
- Applicant: General Electric Company
- Applicant Address: US NY Schenectady
- Assignee: GENERAL ELECTRIC COMPANY
- Current Assignee: GENERAL ELECTRIC COMPANY
- Current Assignee Address: US NY Schenectady
- Agency: Wood IP LLC
- Priority: CN201710206579 20170331
- Main IPC: H02M1/34
- IPC: H02M1/34 ; H03K17/0814 ; H03K17/10 ; H02M3/158

Abstract:
The present disclosure relates to a snubber circuit which comprises a static snubber unit, connected in parallel with the switch, for balancing a static voltage sharing across a switch when the switch is in a state of turn-on or turn-off; and a dynamic snubber unit for balance a dynamic voltage sharing across the switch when the switch is in a process of turn-on or turn-off, comprising a dynamic voltage sharing capacitor connected in parallel with the switch and having a relationship between a capacitance and a voltage of the dynamic voltage sharing capacitor; and a controller for controlling the capacitance of the dynamic voltage sharing capacitor to be in a predetermined working area of capacitance rising while the voltage across the switch is increasing. The present disclosure also relates to a power semiconductor device.
Public/Granted literature
- US20180287487A1 POWER SEMICONDUCTOR DEVICE AND SNUBBER CIRCUIT THEREOF Public/Granted day:2018-10-04
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