Invention Grant
- Patent Title: Demarcation voltage determination via write and read temperature stamps
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Application No.: US16019530Application Date: 2018-06-26
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Publication No.: US10395728B2Publication Date: 2019-08-27
- Inventor: Ning Wu , Shankar Natarajan
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Konrad Raynes Davda & Victor LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/56 ; G06F11/10 ; G11C16/28 ; G11C29/02 ; G11C16/10

Abstract:
A non-volatile memory receives a request from a controller to read data stored in the memory. Moving read references are adjusted as a function of the temperature of the memory at which the data was written and the temperature of the memory at which the data is to be read. Moving read references may also be adjusted as a function of the retention time of the data to be read and the word line type of the storage elements in which the data is stored.
Public/Granted literature
- US20190043566A1 DEMARCATION VOLTAGE DETERMINATION VIA WRITE AND READ TEMPERATURE STAMPS Public/Granted day:2019-02-07
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