- Patent Title: Perpendicular magnetic layer and magnetic device including the same
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Application No.: US15591348Application Date: 2017-05-10
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Publication No.: US10395809B2Publication Date: 2019-08-27
- Inventor: Shigeki Takahashi , Yoshiaki Sonobe , Hiroaki Sukegawa , Hwachol Lee , Kazuhiro Hono , Seiji Mitani , Jun Liu
- Applicant: Samsung Electronics Co., Ltd. , National Institute for Materials Science
- Applicant Address: KR Gyeonggi-do JP Ibaraki
- Assignee: Samsung Electronics Co., Ltd.,National Institute for Materials Science
- Current Assignee: Samsung Electronics Co., Ltd.,National Institute for Materials Science
- Current Assignee Address: KR Gyeonggi-do JP Ibaraki
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2016-094864 20160510
- Main IPC: H01F10/12
- IPC: H01F10/12 ; H01F10/06 ; H01F10/26 ; H01L43/08 ; H01L43/10 ; H01L43/12 ; H01F10/30 ; H01F10/32
Abstract:
Embodiments of the inventive concepts provide a flat perpendicular magnetic layer having a low saturation magnetization and a perpendicular magnetization-type tunnel magnetoresistive element using the same. The perpendicular magnetic layer is a nitrogen-poor (Mn1−xGax)Ny layer (0
Public/Granted literature
- US20170330668A1 PERPENDICULAR MAGNETIC LAYER AND MAGNETIC DEVICE INCLUDING THE SAME Public/Granted day:2017-11-16
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