- 专利标题: Method for producing a semiconductor chip and semiconductor chip
-
申请号: US15594482申请日: 2017-05-12
-
公开(公告)号: US10396106B2公开(公告)日: 2019-08-27
- 发明人: Christoph Eichler , Andre Somers , Harald Koenig , Bernhard Stojetz , Andreas Loeffler , Alfred Lell
- 申请人: OSRAM Opto Semiconductors GmbH
- 申请人地址: DE Regensburg
- 专利权人: OSRAM OPTO SEMICONDUCTORS GMBH
- 当前专利权人: OSRAM OPTO SEMICONDUCTORS GMBH
- 当前专利权人地址: DE Regensburg
- 代理机构: McDermott Will & Emery LLP
- 优先权: DE102016108893 20160513
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H01L21/02 ; H01L21/20 ; H01L21/762 ; H01L21/268 ; H01L21/3105 ; H01L21/324 ; H01S5/22 ; H01S5/223 ; H01S5/20
摘要:
A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.