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公开(公告)号：US12021351B2
公开(公告)日：2024-06-25
申请号：US17292197
申请日：2019-11-07
发明人： Harald König , Bernhard Stojetz , Alfred Lell , Muhammad Ali
CPC分类号： H01S5/4031 , H01S5/02407 , H01S5/34346
摘要： The diode laser comprises a laser bar having a semiconductor body and an active layer, wherein the laser bar has a plurality of individual emitters. At least some individual emitters are respectively assigned a section of the semiconductor body and a current regulating element connected in series therewith, such that, during operation of the individual emitters as intended, an electrical operating current I0 fed to the individual emitter in each case flows completely through the assigned section of the semiconductor body and in the process a voltage drop UH occurs at the section and at least part of said operating current I0 flows through the assigned current regulating element and experiences an electrical resistance RS in the process. In the case of the individual emitters, the current regulating element assigned in each case is configured such that the resistance Rg at an operating temperature T0 has a positive temperature coefficient dRS/dT|T0. Alternatively or additionally, the resistance RS is greater than |ΔUH/I0, wherein ΔUH is the change in the voltage drop UH at the assigned section of the semiconductor body in the event of an increase in the temperature T of the individual emitter from an operating temperature T0 by 1 K.
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公开(公告)号：US10686296B2
公开(公告)日：2020-06-16
申请号：US15764411
申请日：2016-09-29
发明人： Sven Gerhard , Alfred Lell , Clemens Vierheilig , Andreas Löffler
摘要： An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation, wherein the active zone is arranged in a plane, the layer structure includes a top side and four side faces, the first and third side faces are arranged opposite one another, the second and fourth side faces are arranged opposite one another, a strip-type ridge structure is arranged on the top side of the layer structure, the ridge structure extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, and the second recess extends as far as the second side face.
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公开(公告)号：US20200161836A1
公开(公告)日：2020-05-21
申请号：US16611372
申请日：2018-06-08
发明人： Sven Gerhard , Christoph Eichler , Alfred Lell , Bernhard Stojetz
摘要： A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer which has a main extension plane and which, in operation, is adapted to generate light in an active region and to emit light via a light-outcoupling surface, the active region extending from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.
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公开(公告)号：US10553746B2
公开(公告)日：2020-02-04
申请号：US15531342
申请日：2015-11-19
发明人： Alfred Lell , Sven Gerhard
摘要： An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment the optoelectronic component includes a layer structure having an active zone for producing electromagnetic radiation, wherein the active zone is arranged in a first plane, wherein a recess is introduced into the surface of the layer structure, wherein the recess adjoins an end surface of the component, wherein the end surface is arranged in a second plane, wherein the second plane is arranged substantially perpendicularly to the first plane, wherein the recess has a bottom surface and a lateral surface wherein the lateral surface is arranged substantially perpendicularly to the end surface, wherein the lateral surface is arranged tilted at an angle not equal to 90° to the first plane of the active zone, and wherein the bottom surface is arranged in the region of the first plane of the active zone.
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公开(公告)号：US10020639B2
公开(公告)日：2018-07-10
申请号：US15606500
申请日：2017-05-26
发明人： Alfred Lell , Martin Strassburg
IPC分类号： H01S5/00 , H01S5/40 , H01S5/026 , H01S5/343 , H01S5/022 , H01S5/042 , H01S5/20 , H01S5/30 , H01S5/323
CPC分类号： H01S5/4043 , H01S5/0224 , H01S5/026 , H01S5/0425 , H01S5/2059 , H01S5/3013 , H01S5/3095 , H01S5/323 , H01S5/32341 , H01S5/34313 , H01S5/405 , H01S5/4087 , H01S5/4093 , H01S2301/173
摘要： A laser diode arrangement comprising: at least one semiconductor substrate; at least two laser stacks based on the AlInGaN material system, each laser stack having an active zone, wherein at least one of the at least two laser stacks comprises a two-dimensional structure of laser diodes; and at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.
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公开(公告)号：US09972967B2
公开(公告)日：2018-05-15
申请号：US15509028
申请日：2015-08-27
发明人： Sven Gerhard , Alfred Lell , Joachim Pfeiffer , Jens Mueller , Christoph Eichler , Thomas Veit , Thomas Adlhoch
CPC分类号： H01S5/0202 , H01S5/0203 , H01S5/22 , H01S5/2201
摘要： A method of producing a laser chip includes providing a semiconductor wafer; creating a plurality of depressions arranged one behind another along a breaking direction on a top side of the semiconductor wafer, wherein 1) each depression includes a front boundary face and a rear boundary face successively in the breaking direction, 2) in at least one depression, the rear boundary face is inclined by an angle of 95° to 170° relative to the top side of the semiconductor wafer, 3) at least one depression includes a shoulder adjacent to the rear boundary face, and 4) the shoulder includes a shoulder face parallel to the top side of the semiconductor wafer and adjacent to the rear boundary face; and breaking the semiconductor wafer in the breaking direction at a breaking plane oriented perpendicularly to the top side of the semiconductor wafer and which runs through the depressions.
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公开(公告)号：US09843162B2
公开(公告)日：2017-12-12
申请号：US14895120
申请日：2014-06-03
发明人： Jelena Ristic , Martin Straβburg , Alfred Lell , Uwe Strauβ
IPC分类号： H01S5/00 , H01S5/34 , H01L33/24 , H01S5/022 , H01S5/343 , H01L33/00 , H01L33/16 , H01L33/40 , H01S5/02 , H01S5/10 , H01S5/183 , H01S5/40 , H01S5/42 , H01L27/15 , H01L33/10 , H01L33/46
CPC分类号： H01S5/3428 , H01L27/156 , H01L33/007 , H01L33/10 , H01L33/16 , H01L33/24 , H01L33/405 , H01L33/46 , H01S5/0207 , H01S5/0217 , H01S5/02236 , H01S5/1042 , H01S5/1835 , H01S5/18377 , H01S5/341 , H01S5/34333 , H01S5/4025 , H01S5/4087 , H01S5/423
摘要： An assembly includes a carrier and a structure having a core formed on the carrier, wherein the core has a longitudinal extension having two end regions, a first end region is arranged facing the carrier and a second end region is arranged facing away from the carrier, the core is formed as electrically conductive at least in an outer region, the region is at least partially covered with an active zone layer, the active zone layer generates electromagnetic radiation, a mirror layer is provided at least in one end region of the core to reflect electromagnetic radiation in a direction, a first electrical contact layer contacts an electrically conductive region of the core, and a second contact layer contacts the active zone layer.
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8.发明申请公开(公告)号：US20170005234A1
公开(公告)日：2017-01-05
申请号：US15265487
申请日：2016-09-14
发明人： Michael Fehrer , Alfred Lell , Martin Müller , Tilman Schlenker , Sönke Tautz , Uwe Strauß
IPC分类号： H01L33/44 , H01L33/62 , H01L31/18 , H01L31/02 , H01L31/0216 , H01L33/00 , H01L33/56 , H01L31/0203
CPC分类号： H01L33/44 , H01L24/24 , H01L24/48 , H01L24/82 , H01L31/02019 , H01L31/0203 , H01L31/02161 , H01L31/186 , H01L33/0095 , H01L33/56 , H01L33/62 , H01L2224/24145 , H01L2224/24226 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/8592 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01023 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01058 , H01L2924/01068 , H01L2924/01072 , H01L2924/01073 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/10336 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/181 , H01L2924/3025 , H01L2933/0025 , H01L2933/005 , H01S5/02 , H01S5/028 , H01S5/20 , H01S2301/176 , H01L2924/00 , H01L2224/45099 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material directly applied by atomic layer deposition, wherein the semiconductor component is applied on a carrier, the carrier includes electrical connection layers, the semiconductor component electrically connects to one of the electrical connection layers via an electrical contact element, and the sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of the semiconductor component and the electrical contact element and all exposed surfaces of the carrier apart from an electrical connection region of the carrier.
摘要翻译： 光电子部件包括至少一个无机光电活性半导体部件，其具有在操作期间发射或接收光的有源区，以及通过原子层沉积直接施加的密封材料，其中半导体部件被施加在载体上，载体包括电连接 半导体部件经由电接触元件电连接到一个电连接层，并且密封材料完全以气密不渗透的方式覆盖，并且直接接触包括半导体部件的侧壁和底表面的所有暴露表面以及电接触 元件和载体的所有暴露表面与载体的电连接区域分开。
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9.发明授权Light-emitting assembly having a semiconductor layer sequence having an active zone on a columnar structure 有权发光组件，其具有在柱状结构上具有活性区的半导体层序列公开(公告)号：US09531161B2
公开(公告)日：2016-12-27
申请号：US14785090
申请日：2014-04-17
发明人： Jelena Ristic , Martin Straβburg , Martin Mandl , Alfred Lell
IPC分类号： H01S5/00 , H01S5/20 , H01S5/18 , H01S5/40 , H01S5/183 , H01S5/42 , H01L27/15 , H01L33/06 , H01L33/24 , H01L33/32 , H01L33/18 , H01L25/075 , H01L33/00 , H01L33/14
CPC分类号： H01S5/2077 , H01L25/0753 , H01L27/156 , H01L33/0075 , H01L33/06 , H01L33/14 , H01L33/18 , H01L33/24 , H01L33/32 , H01L2924/0002 , H01L2933/0033 , H01S5/18 , H01S5/183 , H01S5/4025 , H01S5/405 , H01S5/42 , H01L2924/00
摘要： An assembly has a columnar structure arranged with one end on a substrate, wherein the structure is at least partly covered with a semiconductor layer structure having an active zone that generates electromagnetic radiation, the active zone has a band gap for a radiative recombination, and the band gap decreases along a longitudinal axis of the structure in a direction of a free end of the structure such that a diffusion of charge carriers in the direction of the free end of the structure and a radiative recombination of charge carrier pairs in the region of the free end of the structure are supported.
摘要翻译： 组件具有一个柱状结构，其一端设置在衬底上，其中该结构至少部分被半导体层结构覆盖，该半导体层结构具有产生电磁辐射的有源区，该活性区具有用于辐射复合的带隙， 带隙沿结构的纵向轴线在结构的自由端的方向上减小，使得电荷载体在结构的自由端的方向上的扩散以及电荷载体对在该结构的区域中的辐射复合 支持结构的自由端。
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公开(公告)号：US09407063B2
公开(公告)日：2016-08-02
申请号：US14627895
申请日：2015-02-20
发明人： Alfred Lell , Christoph Eichler , Wolfgang Schmid , Soenke Tautz , Wolfgang Reill , Dimitri Dini
CPC分类号： H01S5/1082 , H01S5/0078 , H01S5/028 , H01S5/0282 , H01S5/0286 , H01S5/1017 , H01S5/105 , H01S5/1078 , H01S5/1092 , H01S5/22 , H01S2301/02 , H01S2301/166
摘要： A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).
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