Invention Grant
- Patent Title: Forming stacked nanowire semiconductor device
-
Application No.: US16047042Application Date: 2018-07-27
-
Publication No.: US10396181B2Publication Date: 2019-08-27
- Inventor: Marc A. Bergendahl , Kangguo Cheng , Fee Li Lie , Eric R. Miller , Jeffrey C. Shearer , John R. Sporre , Sean Teehan
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L29/423 ; H01L29/786 ; H01L21/3065 ; H01L21/02 ; H01L21/306 ; H01L29/16 ; H01L29/78 ; H01L29/40 ; H01L29/775
Abstract:
A semiconductor device comprises a nanowire arranged over a substrate, a gate stack arranged around the nanowire, a spacer arranged along a sidewall of the gate stack, a cavity defined by a distal end of the nanowire and the spacer, and a source/drain region partially disposed in the cavity and in contact with the distal end of the nanowire.
Public/Granted literature
- US20180337261A1 FORMING STACKED NANOWIRE SEMICONDUCTOR DEVICE Public/Granted day:2018-11-22
Information query
IPC分类:
