Invention Grant
- Patent Title: Memory device and memory system including the same
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Application No.: US15792973Application Date: 2017-10-25
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Publication No.: US10403332B2Publication Date: 2019-09-03
- Inventor: Young Geun Lee , Young Jin Cho , Hee Hyun Nam , Hyo Deok Shin , Young Kwang Yoo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2016-0145185 20161102
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G06F12/0879 ; G06F13/16 ; G11C8/06 ; G11C5/04 ; G11C8/12

Abstract:
Provided are a memory device and a memory system including the same. The memory device may include a first memory rank including at least one first memory chip, a memory controller configured to provide a command to the first memory rank, at least one data buffer configured to buffer data input to the at least one first memory chip or being output from the at least one first memory chip, and a second memory rank connected to the first memory rank and comprising at least one second memory chip. The first memory rank may provide training data and a data strobe signal to the second memory rank based on a data training command from the memory controller without the training data and the data strobe signal passing through the data buffer. The second memory rank may determine a delay of the data strobe signal based on the training data being detected by the second memory rank.
Public/Granted literature
- US20180122434A1 MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME Public/Granted day:2018-05-03
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