- 专利标题: Memory device and memory system including the same
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申请号: US15792973申请日: 2017-10-25
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公开(公告)号: US10403332B2公开(公告)日: 2019-09-03
- 发明人: Young Geun Lee , Young Jin Cho , Hee Hyun Nam , Hyo Deok Shin , Young Kwang Yoo
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2016-0145185 20161102
- 主分类号: G11C7/10
- IPC分类号: G11C7/10 ; G06F12/0879 ; G06F13/16 ; G11C8/06 ; G11C5/04 ; G11C8/12
摘要:
Provided are a memory device and a memory system including the same. The memory device may include a first memory rank including at least one first memory chip, a memory controller configured to provide a command to the first memory rank, at least one data buffer configured to buffer data input to the at least one first memory chip or being output from the at least one first memory chip, and a second memory rank connected to the first memory rank and comprising at least one second memory chip. The first memory rank may provide training data and a data strobe signal to the second memory rank based on a data training command from the memory controller without the training data and the data strobe signal passing through the data buffer. The second memory rank may determine a delay of the data strobe signal based on the training data being detected by the second memory rank.
公开/授权文献
- US20180122434A1 MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME 公开/授权日:2018-05-03
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