Invention Grant
- Patent Title: Methods of forming self-aligned vias and air gaps
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Application No.: US16003827Application Date: 2018-06-08
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Publication No.: US10403542B2Publication Date: 2019-09-03
- Inventor: Susmit Singha Roy , Ziqing Duan , Abhijit Basu Mallick , Praburam Gopalraja
- Applicant: Applied Materials, Inc.
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/311 ; H01J37/32 ; H01L23/532
Abstract:
A first metallization layer comprises a set of first conductive lines that extend along a first direction on a first dielectric layer on a substrate. Pillars are formed on recessed first dielectric layers and a second dielectric layer covers the pillars. A dual damascene etch provides a contact hole through the second dielectric layer and an etch removes the pillars to form air gaps.
Public/Granted literature
- US20180358260A1 Methods Of Forming Self-Aligned Vias And Air Gaps Public/Granted day:2018-12-13
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