- 专利标题: Method for forming a magnetoresistive device
-
申请号: US15488144申请日: 2017-04-14
-
公开(公告)号: US10403813B2公开(公告)日: 2019-09-03
- 发明人: Wolfgang Raberg
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Schiff Hardin LLP
- 主分类号: G11B5/127
- IPC分类号: G11B5/127 ; H04R31/00 ; H01L43/12 ; G01R33/09 ; G01R33/00 ; H01L43/02 ; H01L43/08
摘要:
Embodiments relate to magnetoresistive (xMR) sensors. In an embodiment, an xMR stack structure is configured to form two different xMR elements that can be coupled to form a locally differential Wheatstone bridge. The result is a highly sensitive magnetic sensor with small dimensions and robustness against thermal drift and sensor/encoder pitch mismatch that can be produced using standard processing equipment. Embodiments also relate to methods of forming and patterning the stack structure and sensors that provide information regarding direction in addition to speed.
公开/授权文献
- US20170222137A1 XMR MONOCELL SENSORS, SYSTEMS AND METHODS 公开/授权日:2017-08-03
信息查询
IPC分类: