Invention Grant
- Patent Title: Transistor device
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Application No.: US15921893Application Date: 2018-03-15
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Publication No.: US10404250B2Publication Date: 2019-09-03
- Inventor: Thomas Basler , Roman Baburske , Johannes Georg Laven , Franz-Josef Niedernostheide , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE
- Agency: Design IP
- Priority: DE102017105713 20170316
- Main IPC: H03K17/567
- IPC: H03K17/567 ; H01L27/06 ; H01L29/16 ; H01L29/78 ; H03K17/12 ; H01L27/088 ; H01L29/165 ; H01L29/739 ; H01L29/778 ; H01L29/808 ; H03K17/687
Abstract:
Transistor devices are described that include a first transistor and a second transistor coupled in parallel between a first terminal and a second terminal. The second transistor is based on a wide bandgap semiconductor material. The second transistor has a breakthrough voltage lower than a breakthrough voltage of the first transistor over a predetermined operating range. The predetermined operating range comprises at least an operating range for which the transistor device is specified.
Public/Granted literature
- US20180269872A1 TRANSISTOR DEVICE Public/Granted day:2018-09-20
Information query
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