Invention Grant
- Patent Title: Semiconductor devices having a membrane layer with smooth stress-relieving corrugations and methods of fabrication thereof
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Application No.: US14611953Application Date: 2015-02-02
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Publication No.: US10405118B2Publication Date: 2019-09-03
- Inventor: Alfons Dehe , Stefan Barzen , Wolfgang Friza , Wolfgang Klein
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: B81B3/00
- IPC: B81B3/00 ; H04R7/14 ; H04R19/04 ; H04R31/00 ; H04R19/00
Abstract:
In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer is removed.
Public/Granted literature
- US20150145079A1 Semiconductor Devices and Methods of Fabrication Thereof Public/Granted day:2015-05-28
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