- 专利标题： Thin film transistor unaffected by light and display apparatus having the same
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申请号： US13782823申请日： 2013-03-01
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公开(公告)号： US10409126B2公开(公告)日： 2019-09-10
- 发明人: Jihun Lim , Byung Du Ahn , Gun Hee Kim , Junhyun Park , Jehun Lee , Jaewoo Park , Dae Hwan Kim , Hyunkwang Jung , Jaehyeong Kim
- 申请人： SAMSUNG DISPLAY CO., LTD. , KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION
- 申请人地址： KR Yongin, Gyeonggi-Do KR Seoul
- 专利权人： SAMSUNG DISPLAY CO., LTD.,KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION
- 当前专利权人： SAMSUNG DISPLAY CO., LTD.,KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION
- 当前专利权人地址： KR Yongin, Gyeonggi-Do KR Seoul
- 代理机构： F. Chau & Associates, LLC
- 优先权： KR10-2012-0039237 20120416
- 主分类号： H01L51/10
- IPC分类号： H01L51/10 ; G02F1/1362 ; G02F1/1368 ; H01L29/417 ; H01L29/786
摘要：
A thin film transistor includes a gate electrode, a first insulating layer disposed to cover the gate electrode, a semiconductor layer disposed on the first insulating layer that includes a first side surface portion, a source electrode disposed on the semiconductor layer, and a drain electrode disposed on the first insulating layer that includes a second side surface portion. The first side surface portion makes contact with the second side surface portion.
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