Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15905979Application Date: 2018-02-27
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Publication No.: US10409593B2Publication Date: 2019-09-10
- Inventor: Hyun Pil Kim , Hyun Woo Sim , Seong Woo Ahn
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2017-0042125 20170331
- Main IPC: G06F9/30
- IPC: G06F9/30 ; G06F1/3287

Abstract:
A semiconductor device including a first processor having a first register, the first processor configured to perform region of interest (ROI) calculations using the first register; and a second processor having a second register, the second processor configured to perform arithmetic calculations using the second register. The first register is shared with the second processor, and the second register is shared with the first processor.
Public/Granted literature
- US20180300128A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-10-18
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