Invention Grant
- Patent Title: Memory device for performing internal process and operating method thereof
-
Application No.: US16293372Application Date: 2019-03-05
-
Publication No.: US10410685B2Publication Date: 2019-09-10
- Inventor: Reum Oh , Je-Min Ryu , Pavan Kumar Kasibhatla
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2016-0071074 20160608; KR10-2017-0061636 20170518
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G06F12/0893 ; G11C29/12 ; G11C29/48 ; G11C7/10 ; G06F12/084 ; H01L25/18

Abstract:
A memory device includes a memory cell array having a plurality of memory cell groups with a corresponding plurality of independent channels, and the device and an operating method thereof perform an internal data processing operation for the memory cell groups. The memory device includes an internal command generator configured to generate one or more internal commands in order to perform an internal data processing operation in response to a reception of a command, and an internal common bus for a common internal processing channel which is disposed to be shared by the plurality of memory cell groups and configured to form a transmission path of data between the plurality of memory cell groups when the internal data processing operation is performed.
Public/Granted literature
- US20190198061A1 MEMORY DEVICE FOR PERFORMING INTERNAL PROCESS AND OPERATING METHOD THEREOF Public/Granted day:2019-06-27
Information query