Invention Grant
- Patent Title: Semiconductor component having a doped substrate layer and corresponding methods of manufacturing
-
Application No.: US15868619Application Date: 2018-01-11
-
Publication No.: US10411097B2Publication Date: 2019-09-10
- Inventor: Hans-Joachim Schulze , Jens Peter Konrath , Roland Rupp , Christian Hecht
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L21/04 ; H01L21/265 ; H01L21/762 ; H01L29/739 ; H01L29/78

Abstract:
Representative implementations of devices and techniques provide an optimized layer for a semiconductor component. In an example, a doped portion of a wafer, forming a substrate layer may be transferred from the wafer to an acceptor, or handle wafer. A component layer may be applied to the substrate layer. The acceptor wafer is detached from the substrate layer. In some examples, further processing may be executed with regard to the substrate and/or component layers.
Public/Granted literature
- US20180158916A1 Semiconductor Component Having a Doped Substrate Layer and Corresponding Methods of Manufacturing Public/Granted day:2018-06-07
Information query
IPC分类: