Invention Grant
- Patent Title: Radiation-emitting optoelectronic device
-
Application No.: US15570699Application Date: 2016-04-29
-
Publication No.: US10411170B2Publication Date: 2019-09-10
- Inventor: Sonja Tragl , Dominik Eisert , Stefan Lange , Nils Kaufmann , Alexander Martin , Krister Bergenek
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Priority: DE102015106757 20150430
- International Application: PCT/EP2016/059672 WO 20160429
- International Announcement: WO2016/174236 WO 20161103
- Main IPC: H01L33/50
- IPC: H01L33/50 ; C09K11/77 ; A61B1/06 ; H01L33/48 ; H01L33/58 ; H01L33/62

Abstract:
A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.
Public/Granted literature
- US20180358514A1 Radiation-Emitting Optoelectronic Device Public/Granted day:2018-12-13
Information query
IPC分类: