- 专利标题: Threshold voltage margin analysis
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申请号: US15642410申请日: 2017-07-06
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公开(公告)号: US10418122B2公开(公告)日: 2019-09-17
- 发明人: Kishore K. Muchherla , Sampath K. Ratnam , Abolfazl Rashwand
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Brooks, Cameron & Huebsch, PLLC
- 主分类号: G06F11/00
- IPC分类号: G06F11/00 ; G11C29/50 ; G11C29/52 ; G11C5/14 ; G11C16/34 ; G11C29/42 ; G06F11/10
摘要:
The present disclosure is related to a threshold voltage margin analysis. An example embodiment apparatus can include a memory and a controller coupled to the memory. The controller is configured to determine a previous power loss of a memory to be an asynchronous power loss, and identify a portion of the memory last subject to programming operations during the determined asynchronous power loss. The controller is further configured to perform a threshold voltage (Vt) margin analysis on the portion of the memory responsive to the determined asynchronous power loss.
公开/授权文献
- US20170301408A1 THRESHOLD VOLTAGE MARGIN ANALYSIS 公开/授权日:2017-10-19
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