- 专利标题： Methods, apparatus, and system for a semiconductor device comprising gates with short heights
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申请号： US15976326申请日： 2018-05-10
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公开(公告)号： US10418272B1公开(公告)日： 2019-09-17
- 发明人: Jiehui Shu , Garo Jacques Derderian , Hui Zang , John Zhang , Haigou Huang , Jinping Liu
- 申请人： GLOBALFOUNDRIES INC.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Williams Morgan, P.C.
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/762 ; H01L21/8238 ; H01L21/8234 ; H01L27/088 ; H01L29/66 ; H01L29/78 ; H01L27/092
摘要：
At least one method, apparatus and system providing semiconductor devices with relatively short gate heights but without a relatively high risk of contact-to-gate shorts. In embodiments, the method, apparatus, and system may provide contact formation by way of self-aligned contact processes.
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