Invention Grant
- Patent Title: Oxide semiconductor film and semiconductor device
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Application No.: US15846518Application Date: 2017-12-19
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Publication No.: US10418491B2Publication Date: 2019-09-17
- Inventor: Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2009-218877 20090924
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L29/786 ; H01L27/12 ; H01L29/04 ; H01L29/12 ; H01L21/263 ; H01L29/66 ; H01L29/24 ; H01L29/417
Abstract:
It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.
Public/Granted literature
- US20180122958A1 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE Public/Granted day:2018-05-03
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