公开(公告)号：US12206023B2

公开(公告)日：2025-01-21

申请号：US18381668

申请日：2023-10-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro Takahashi ,  Kengo Akimoto ,  Shunpei Yamazaki

IPC: H01L29/786 ,  C01G15/00 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/12 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H10K59/121

Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1−δO3(ZnO)m (0

公开(公告)号：US12198941B2

公开(公告)日：2025-01-14

申请号：US18434977

申请日：2024-02-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/477 ,  H01L29/66 ,  H01L29/786

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US12034064B2

公开(公告)日：2024-07-09

申请号：US17111838

申请日：2020-12-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Kengo Akimoto ,  Kojiro Shiraishi

IPC: H01L29/66 ,  H01L21/46 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/46 ,  H01L27/1225 ,  H01L29/7869

Abstract: It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

公开(公告)号：US12002818B2

公开(公告)日：2024-06-04

申请号：US18215987

申请日：2023-06-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

IPC: H01L27/14 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1368 ,  H01L27/12

CPC classification number: H01L27/124 ,  G02F1/134309 ,  G02F1/13454 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/1255 ,  G02F2202/10

Abstract: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

公开(公告)号：US11799033B2

公开(公告)日：2023-10-24

申请号：US17242410

申请日：2021-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro Takahashi ,  Kengo Akimoto ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  C01G15/00 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H10K59/121

CPC classification number: H01L29/7869 ,  C01G15/006 ,  G02F1/1368 ,  G02F1/134309 ,  G02F1/136213 ,  H01L21/02565 ,  H01L21/02609 ,  H01L27/1225 ,  H01L27/1285 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696 ,  C01P2006/40 ,  G02F2201/123 ,  H10K59/1213

Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1−δO3(ZnO)m (0

公开(公告)号：US11610918B2

公开(公告)日：2023-03-21

申请号：US16704462

申请日：2019-12-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Rihito Wada ,  Yoko Chiba

IPC: H01L27/12 ,  H01L29/417 ,  G02F1/1339 ,  G02F1/1345 ,  H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L29/04 ,  H01L29/24 ,  H01L51/52

Abstract: A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

公开(公告)号：US11532488B2

公开(公告)日：2022-12-20

申请号：US17325490

申请日：2021-05-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC: H01L29/768 ,  H01L27/12 ,  H01L21/477 ,  H01L29/66 ,  H01L21/02 ,  G02F1/1333 ,  G02F1/1368 ,  H01L29/786

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US20220149164A1

公开(公告)日：2022-05-12

申请号：US17582038

申请日：2022-01-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Daisuke Kawae

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L51/05 ,  H01L51/10

Abstract: A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.

公开(公告)号：US10930792B2

公开(公告)日：2021-02-23

申请号：US16783577

申请日：2020-02-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Akiharu Miyanaga ,  Kengo Akimoto ,  Kojiro Shiraishi

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L27/12

Abstract: To offer a semiconductor device including a thin film transistor having excellent characteristics and high reliability and a method for manufacturing the semiconductor device without variation. The summary is to include an inverted-staggered (bottom-gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used for a semiconductor layer and a buffer layer is provided between the semiconductor layer and source and drain electrode layers. An ohmic contact is formed by intentionally providing a buffer layer containing In, Ga, and Zn and having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrode layers.

公开(公告)号：US20200091202A1

公开(公告)日：2020-03-19

申请号：US16690804

申请日：2019-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/1362 ,  H01L27/02 ,  H01L29/786

Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.