A correction method for a mask pattern is provided. The method includes providing a chip pattern region including a plurality of main features, and providing first auxiliary patterns around each main feature. The method also includes performing a first optical proximity correction to correct the main features into first correction features, and providing a plurality of detection regions. Each detection region is connected to an adjacent first correction feature via the first auxiliary pattern. In addition, the method includes performing an exposure process to obtain a light intensity distribution corresponding to each detection region after performing the exposure process. Moreover, the method includes correcting the first auxiliary patterns into second auxiliary patterns based on an auxiliary pattern correction model and the light intensity distribution of each detection region. Further, the method includes performing a second optical proximity correction on the first correction features to obtain second correction features.