Invention Grant
- Patent Title: Method for producing optoelectronic conversion semiconductor chips and composite of conversion semiconductor chips
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Application No.: US15735945Application Date: 2016-06-10
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Publication No.: US10424698B2Publication Date: 2019-09-24
- Inventor: Christian Leirer , Korbinian Perzlmaier
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Priority: DE102015109413 20150612
- International Application: PCT/EP2016/063328 WO 20160610
- International Announcement: WO2016/198620 WO 20161215
- Main IPC: H01L33/50
- IPC: H01L33/50 ; H01L25/075 ; H01L33/00 ; H01L33/44 ; H01L33/38

Abstract:
A method for producing optoelectronic conversion semiconductor chips and a composite of conversion semiconductor chips are disclosed. In an embodiment the method includes growing a semiconductor layer sequence on a growth substrate, applying an electric contact on to a rear side of the semiconductor layer sequence facing away from the growth substrate, thinning the growth substrate, after thinning, cutting the growth substrate at least to the semiconductor layer sequence thereby forming a first intermediate space, applying a conversion layer on to the thinned growth substrate and singulating at least the thinned growth substrate and the semiconductor layer sequence.
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