- 专利标题： Acoustic wave device and method of fabricating the same
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申请号： US15331598申请日： 2016-10-21
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公开(公告)号： US10425060B2公开(公告)日： 2019-09-24
- 发明人: Kentaro Nakamura , Fumiya Matsukura , Takashi Matsuda , Tsutomu Miyashita , Jun Tsutsumi
- 申请人： TAIYO YUDEN CO., LTD.
- 申请人地址： JP Tokyo
- 专利权人： TAIYO YUDEN CO., LTD.
- 当前专利权人： TAIYO YUDEN CO., LTD.
- 当前专利权人地址： JP Tokyo
- 代理机构： Chen Yoshimura LLP
- 优先权： JP2016-002013 20160107
- 主分类号： H03H9/25
- IPC分类号： H03H9/25 ; H03H3/08 ; H03H9/02 ; H03H9/64 ; H03H9/145
摘要：
An acoustic wave device includes: a piezoelectric substrate; a comb-shaped electrode that is located on the piezoelectric substrate and excites an acoustic wave; and a silicon oxide film that is located on the piezoelectric substrate so as to cover the comb-shaped electrode, and has a total concentration of carbon (C), hydrogen (H), nitrogen (N), and fluorine (F) equal to or less than 3.5 atomic %.
公开/授权文献
- US20170201232A1 ACOUSTIC WAVE DEVICE AND METHOD OF FABRICATING THE SAME 公开/授权日：2017-07-13
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