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公开(公告)号：US10763822B2
公开(公告)日：2020-09-01
申请号：US16175235
申请日：2018-10-30
发明人： Takashi Matsuda , Masafumi Iwaki
摘要： An acoustic wave resonator includes: a piezoelectric substrate; and an IDT that is located on the piezoelectric substrate and includes comb-shaped electrodes facing each other, each of the comb-shaped electrodes having grating electrode and a bus bar connected to the grating electrodes, a duty ratio of grating electrodes of the comb-shaped electrodes in a center region of an overlap region differing from a duty ratio of grating electrodes of the comb-shaped electrodes in an edge region of the overlap region in an arrangement direction of the grating electrodes, the grating electrodes of each of the comb-shaped electrodes overlapping with the grating electrodes of the other in the overlap region, a grating electrode of a first one of the comb-shaped electrodes in the center region having a different width from a grating electrode of a second one of the comb-shaped electrodes in the center region.
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公开(公告)号：US09641152B2
公开(公告)日：2017-05-02
申请号：US14824878
申请日：2015-08-12
发明人： Kentaro Nakamura , Jun Tsutsumi , Yoshio Sato , Tabito Tanaka , Takashi Matsuda
CPC分类号： H03H9/14547 , H03H9/059 , H03H9/1452 , H03H9/14561 , H03H9/14564 , H03H9/1457 , H03H9/14594 , H03H9/64 , H03H9/6483
摘要： An acoustic wave device includes: a piezoelectric substrate; and an IDT formed on the piezoelectric substrate, wherein an anisotropy coefficient is positive, an overlap region where electrode fingers of the IDT overlap each other includes a center region and an edge region, the electrode fingers in the center and edge regions are continuously formed, the electrode finger in the edge region is inclined with respect to the electrode finger in the center region so that a pitch in a width direction of the electrode finger in the edge region is greater than a pitch in a width direction of the electrode finger in the center region, and an angle between the width direction in the center region and a crystal axis orientation of the piezoelectric substrate is less than an angle between the width direction in the edge region and the crystal axis orientation.
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公开(公告)号：US20210297055A1
公开(公告)日：2021-09-23
申请号：US17199349
申请日：2021-03-11
发明人： Mamoru Ishida , Takashi Matsuda
摘要： An acoustic wave device includes a piezoelectric layer, the piezoelectric layer being a rotated Y-cut lithium niobate substrate or an X-cut lithium tantalate substrate; an upper conductive layer having a substantially consistent density, on or over the upper surface of the piezoelectric layer; a lower conductive layer having a substantially consistent density, on or below the lower surface of the piezoelectric layer; and a first additional film having a substantially consistent density, wherein at least one of the upper and lower conductive layers is mainly made of ruthenium, chrome, copper, molybdenum, tungsten, tantalum, platinum, rhodium, or iridium, and wherein at least a part of the first additional film is in the resonance region in the plan view, and the density of the first additional film is equal to or less than the density of aluminum.
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公开(公告)号：US11069615B2
公开(公告)日：2021-07-20
申请号：US16655994
申请日：2019-10-17
发明人： Takeshi Sakashita , Takashi Matsuda
摘要： An inductor includes: a substrate; a first wiring line located on the substrate; a second wiring line located above the first wiring line and spaced from the first wiring line through an air gap, at least a part of the second wiring line overlapping with at least a part of the first wiring line in plan view; a first supporting post connecting ends of the first and second wiring lines such that a direct current conducts between the first and second wiring lines through the first supporting post; and a second supporting post provided such that the second supporting post overlaps with the second wiring line in plan view, and overlaps with the first wiring line in plan view or is surrounded by the first wiring line in plan view, the second supporting post being insulated from the first wiring line, the second supporting post supporting the second wiring line.
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公开(公告)号：US10461718B2
公开(公告)日：2019-10-29
申请号：US15416263
申请日：2017-01-26
摘要： An acoustic wave resonator includes: a piezoelectric substrate; and an IDT that is located on the piezoelectric substrate and includes first regions and second regions alternately arranged in an extension direction of electrode fingers, which excite an acoustic wave, in an overlap region in which the electrode fingers overlap, at least one electrode finger of the electrode fingers in the second regions having a different width from the at least one electrode finger in the first regions, a width of an outer second region of the second regions in the extension direction differs from a width of an inner second region of the second regions.
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公开(公告)号：US10425060B2
公开(公告)日：2019-09-24
申请号：US15331598
申请日：2016-10-21
摘要： An acoustic wave device includes: a piezoelectric substrate; a comb-shaped electrode that is located on the piezoelectric substrate and excites an acoustic wave; and a silicon oxide film that is located on the piezoelectric substrate so as to cover the comb-shaped electrode, and has a total concentration of carbon (C), hydrogen (H), nitrogen (N), and fluorine (F) equal to or less than 3.5 atomic %.
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公开(公告)号：US09667226B2
公开(公告)日：2017-05-30
申请号：US14572246
申请日：2014-12-16
CPC分类号： H03H9/6489 , H03H3/08 , H03H9/02881 , H03H9/02889 , H03H9/02944 , H03H9/02952 , H03H9/14541
摘要： A surface acoustic wave device includes: a pair of comb-type electrodes that are provided on a piezoelectric substrate and include electrode fingers and dummy electrode fingers, the electrode fingers of one of the pair of comb-type electrodes facing the dummy electrode fingers of the other comb-type electrode; and additional films that are provided to cover gaps between tip ends of the electrode fingers and tip ends of the dummy electrode fingers and to overlap with at least one of first through third groups in which the first and second groups respectively include the electrode fingers and the dummy electrode fingers located at opposite sides of the gaps in a first direction in which the electrode fingers extend, and the third group includes the electrode fingers located at sides of the gaps in a second direction that crosses the first direction.
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公开(公告)号：US08664835B2
公开(公告)日：2014-03-04
申请号：US13712218
申请日：2012-12-12
发明人： Satoru Matsuda , Takashi Matsuda , Michio Miura
IPC分类号： H03H9/02
CPC分类号： H01L41/047 , H03H9/02102 , H03H9/02834 , H03H9/131 , H03H9/174
摘要： An acoustic wave device includes: an electrode that excites an acoustic wave and is located on a substrate; and a silicon oxide film that is located so as to cover the electrode and is doped with an element or molecule displacing O in a Si—O bond, wherein the element or molecule is F, H, CH3, CH2, Cl, C, N, P, or S.
摘要翻译： 声波装置包括：激发声波并位于基板上的电极; 以及氧化硅膜，其被定位成覆盖电极并且掺杂有在Si-O键中置换O的元素或分子，其中元素或分子是F，H，CH 3，CH 2，Cl，C，N ，P或S.
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公开(公告)号：US11469735B2
公开(公告)日：2022-10-11
申请号：US16688446
申请日：2019-11-19
发明人： Takashi Matsuda , Yoshio Satoh , Mamoru Ishida
摘要： An acoustic wave device includes: a piezoelectric substrate; electrodes sandwiching the piezoelectric substrate and exciting a thickness shear vibration in the piezoelectric substrate; and an edge region that is a region surrounding a center region of a resonance region, wherein a first region of the edge region is located on both sides of the center region in a first direction substantially parallel to a displacement direction of a thickness shear vibration, a second region of the edge region is located on both sides of the center region in a second direction substantially perpendicular to the first direction, a width of the second region is different from a width of the first region, and acoustic velocities of acoustic waves in the piezoelectric substrate in the first and second regions are less than that in the piezoelectric substrate in the center region.
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公开(公告)号：US10700662B2
公开(公告)日：2020-06-30
申请号：US16198284
申请日：2018-11-21
发明人： Shinpei Miura , Satoshi Imasu , Takashi Matsuda , Masafumi Iwaki
摘要： An acoustic wave device includes: a piezoelectric substrate; and a pair of comb-shaped electrodes that is located on the piezoelectric substrate, includes a metal film, and excites a surface acoustic wave, the metal film being mainly composed of a metal having a melting point equal to or higher than a melting point of Pt, the metal film having a first region in which a crystal grain has a columnar shape and a second region that is located on and/or under the first region in a stacking direction and has less crystallinity than the first region or has an amorphous structure.
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