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公开(公告)号：US09887343B2
公开(公告)日：2018-02-06
申请号：US14555125
申请日：2014-11-26
发明人： Jun Tsutsumi , Masafumi Iwaki , Kentaro Nakamura
IPC分类号： H03H9/25 , H01L41/047 , H03H9/02
CPC分类号： H01L41/047 , H03H9/02559 , H03H9/02669
摘要： An acoustic wave element includes: a piezoelectric substrate; an IDT (Interdigital Transducer) formed on the piezoelectric substrate; and an end face of the piezoelectric substrate that is formed on at least one end of the IDT in a propagation direction of an acoustic wave; wherein when a wavelength of the acoustic wave which the IDT excites is expressed by “λ” and a metallization ratio of the IDT is expressed by “D”, a distance between an inner end of an electrode finger of the IDT nearest to the end face and the end face is equal to or more than 7λ/16+D×λ/4 and equal to or less than 3λ/4+D×λ/4.
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公开(公告)号：US09641152B2
公开(公告)日：2017-05-02
申请号：US14824878
申请日：2015-08-12
发明人： Kentaro Nakamura , Jun Tsutsumi , Yoshio Sato , Tabito Tanaka , Takashi Matsuda
CPC分类号： H03H9/14547 , H03H9/059 , H03H9/1452 , H03H9/14561 , H03H9/14564 , H03H9/1457 , H03H9/14594 , H03H9/64 , H03H9/6483
摘要： An acoustic wave device includes: a piezoelectric substrate; and an IDT formed on the piezoelectric substrate, wherein an anisotropy coefficient is positive, an overlap region where electrode fingers of the IDT overlap each other includes a center region and an edge region, the electrode fingers in the center and edge regions are continuously formed, the electrode finger in the edge region is inclined with respect to the electrode finger in the center region so that a pitch in a width direction of the electrode finger in the edge region is greater than a pitch in a width direction of the electrode finger in the center region, and an angle between the width direction in the center region and a crystal axis orientation of the piezoelectric substrate is less than an angle between the width direction in the edge region and the crystal axis orientation.
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3.发明授权公开(公告)号：US10270424B2
公开(公告)日：2019-04-23
申请号：US15451667
申请日：2017-03-07
摘要： An acoustic wave resonator includes: a piezoelectric substrate; an IDT located on the piezoelectric substrate and including comb-shaped electrodes facing each other, each of the comb-shaped electrodes including: electrode fingers exciting an acoustic wave; and a bus bar to which the electrode fingers are connected; a dielectric film located on the piezoelectric substrate in an overlap region, where the electrode fingers of one of the comb-shaped electrodes and the electrode fingers of the other overlap, so as to cover the electrode fingers; and an additional film located on the dielectric film in the overlap region and having a density greater than that of the dielectric film, and of which a film thickness in edge regions corresponding to both edges of the overlap region in an extension direction of the electrode fingers is greater than a film thickness in a central region sandwiched between the edge regions in the overlap region.
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公开(公告)号：US10425060B2
公开(公告)日：2019-09-24
申请号：US15331598
申请日：2016-10-21
摘要： An acoustic wave device includes: a piezoelectric substrate; a comb-shaped electrode that is located on the piezoelectric substrate and excites an acoustic wave; and a silicon oxide film that is located on the piezoelectric substrate so as to cover the comb-shaped electrode, and has a total concentration of carbon (C), hydrogen (H), nitrogen (N), and fluorine (F) equal to or less than 3.5 atomic %.
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公开(公告)号：US09667226B2
公开(公告)日：2017-05-30
申请号：US14572246
申请日：2014-12-16
CPC分类号： H03H9/6489 , H03H3/08 , H03H9/02881 , H03H9/02889 , H03H9/02944 , H03H9/02952 , H03H9/14541
摘要： A surface acoustic wave device includes: a pair of comb-type electrodes that are provided on a piezoelectric substrate and include electrode fingers and dummy electrode fingers, the electrode fingers of one of the pair of comb-type electrodes facing the dummy electrode fingers of the other comb-type electrode; and additional films that are provided to cover gaps between tip ends of the electrode fingers and tip ends of the dummy electrode fingers and to overlap with at least one of first through third groups in which the first and second groups respectively include the electrode fingers and the dummy electrode fingers located at opposite sides of the gaps in a first direction in which the electrode fingers extend, and the third group includes the electrode fingers located at sides of the gaps in a second direction that crosses the first direction.
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公开(公告)号：US09473108B2
公开(公告)日：2016-10-18
申请号：US14482272
申请日：2014-09-10
发明人： Kentaro Nakamura , Hidetaro Nakazawa , Shogo Inoue , Jun Tsutsumi
CPC分类号： H03H9/6489 , H03H3/08 , H03H9/02818
摘要： A surface acoustic wave device includes: a pair of comb-like electrodes formed on a piezoelectric substrate, each of which includes electrode fingers, dummy electrode fingers and a bus bar to which the electrode fingers and the dummy electrode fingers are connected, the electrode fingers and the dummy electrode fingers of one of the pair of comb-like electrodes facing the dummy electrode fingers and the electrode fingers of the other com-like electrode, respectively; and additional films extending in the form of a strip in a first direction in which the electrode fingers are arranged side by side, each of the additional films covering at least parts of gaps defined by ends of the electrode fingers of one of the pair of comb-like electrodes and ends of the dummy electrode fingers of the other comb-like electrode.
摘要翻译： 表面声波装置包括：形成在压电基板上的一对梳状电极，每一个都包括电极指，虚拟电极指和连接有电极指和虚拟电极指的汇流条，电极指 并且一对梳状电极中的一个的虚拟电极指分别面对虚拟电极指和另一个com状电极的电极指; 以及在电极指并排布置的第一方向上以带状形式延伸的附加膜，每个附加膜覆盖由一对梳子之一的电极指的端部限定的至少部分间隙 电极和另一梳状电极的虚拟电极指的端部。
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公开(公告)号：US20130328735A1
公开(公告)日：2013-12-12
申请号：US13915117
申请日：2013-06-11
发明人： Daiki Ishii , Tomokazu Ikenaga , Kentaro Nakamura
CPC分类号： H01G7/06 , B82Y99/00 , G06K19/0726 , G06K19/0727 , H01Q7/005 , Y10S977/948
摘要： A variable capacitance capacitor element according to an embodiment of the present invention comprises: a supporting substrate; a first electrode layer provided on the supporting substrate; a second electrode layer provided opposite to the first electrode layer; and a dielectric layer positioned between the first electrode layer and the second electrode layer. In accordance with an aspect, a main component of the dielectric layer is represented by a composition formula Ba1-xSrxTiO3 (0.5≦x≦0.8), and the first thin film dielectric layer has a thickness of 200 nm or smaller.
摘要翻译： 根据本发明实施例的可变容性电容器元件包括：支撑衬底; 设置在所述支撑基板上的第一电极层; 与第一电极层相对设置的第二电极层; 以及位于第一电极层和第二电极层之间的电介质层。 根据一方面，电介质层的主要成分由组成式Ba1-xSrxTiO3（0.5 @ x @ 0.8）表示，第一薄膜电介质层的厚度为200nm以下。
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公开(公告)号：US09680441B2
公开(公告)日：2017-06-13
申请号：US13938883
申请日：2013-07-10
发明人： Fumitaka Iizuka , Kentaro Nakamura
摘要： An impedance matching circuit is connected to a first circuit block (impedance matching target circuit) that requires impedance matching and that has one terminal connected to a signal line and the other terminal connected to a ground, the impedance matching circuit having a second circuit block that has a first circuit and a second circuit connected in parallel. In the first circuit, a first capacitor having a variable capacitance and a first inductor having a first inductance are connected in series, and in the second circuit, a second inductor having a second inductance and a switch are connected are connected in series. The impedance matching circuit has one terminal connected to the signal line of the first circuit block and the other terminal connected to the ground of the first circuit block.
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公开(公告)号：US09634226B2
公开(公告)日：2017-04-25
申请号：US13911994
申请日：2013-06-06
IPC分类号： H01L41/053 , H01L41/29 , H03H9/02 , H03H9/05
CPC分类号： H01L41/053 , H01L41/29 , H03H9/02228 , H03H9/02559 , H03H9/059 , Y10T29/42
摘要： A Lamb wave device according to an embodiment of the present invention includes a piezoelectric function member and a supporting member. The piezoelectric function member has a piezoelectric substrate, IDT electrodes, and a cutout portion. The IDT electrodes are disposed on the upper surface of the piezoelectric substrate. The cutout portion is formed in the piezoelectric substrate, and includes a step face provided between the upper surface and the lower surface of the piezoelectric substrate. The supporting member has a supporting surface and a cavity. The supporting surface is bonded to the lower surface of the piezoelectric substrate, and is exposed in the cutout portion toward the upper surface of the piezoelectric substrate. The cavity is formed adjacent to the supporting surface, and faces the IDT electrodes through the piezoelectric substrate.
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公开(公告)号：US10938371B2
公开(公告)日：2021-03-02
申请号：US15958756
申请日：2018-04-20
摘要： An acoustic wave resonator includes: an IDT located on a piezoelectric substrate, including comb-shaped electrodes facing each other and including electrode fingers and a bus bar connecting the electrode fingers; a first silicon oxide film located on the electrode fingers in an overlap region where the electrode fingers overlap and having a film thickness in a part of edge regions, which correspond to both ends of the overlap region, equal to or less than that in a center region sandwiched between the edge regions; and a second silicon oxide film located on the electrode fingers, containing an element slowing an acoustic velocity in a silicon oxide film when being added to the silicon oxide film, having a concentration of the element greater than that in the first silicon oxide film, and having a film thickness in a part of the edge regions greater than that in the center region.
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