Invention Grant
- Patent Title: Apparatuses comprising semiconductor dies in face-to-face arrangements
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Application No.: US16056250Application Date: 2018-08-06
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Publication No.: US10431566B2Publication Date: 2019-10-01
- Inventor: Dai Sasaki , Mitsuaki Katagiri , Satoshi Isa
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/528 ; H01L23/00 ; H01L21/66 ; H01L23/525

Abstract:
Some embodiments include an apparatus having a first chip and a second chip. Each of the first and second chips comprises a multilevel wiring structure and a redistribution wiring layer over the multilevel wiring structure. The redistribution wiring layers include redistribution wiring and pads electrically coupled to the redistribution wiring. The first chip is mounted above the second chip so that the redistribution wiring layer of the first chip faces the redistribution wiring layer of the second chip. The pad of the first chip faces the pad of the second chip, and is vertically spaced from the pad of the second chip by an intervening insulative region. The redistribution wiring of the second chip is electrically coupled to the redistribution wiring of the first chip through a bonding region.
Public/Granted literature
- US20190013294A1 Apparatuses Comprising Semiconductor Dies in Face-To-Face Arrangements Public/Granted day:2019-01-10
Information query
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