Embodiments of an electrostatic discharge (ESD) protection device and a method for operating an ESD protection device are described. In one embodiment, an ESD protection device includes stacked first and second PNP bipolar transistors that are configured to shunt current between a first node and a second node in response to an ESD pulse received between the first and second nodes and an NMOS transistor connected in series with the stacked first and second PNP bipolar transistors and the second node. An emitter and a base of the second PNP bipolar transistor are connected to a collector of the first PNP bipolar transistor. A gate terminal of the NMOS transistor is connected to a source terminal of the NMOS transistor. Other embodiments are also described.