发明授权
- 专利标题: Semiconductor devices with multi-gate structure and method of manufacturing the same
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申请号: US15830981申请日: 2017-12-04
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公开(公告)号: US10431585B2公开(公告)日: 2019-10-01
- 发明人: Jung-Gil Yang , Geum-Jong Bae , Dong-Il Bae , Seung-Min Song , Woo-Seok Park
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine, Whitt & Francos, PLLC
- 优先权: KR10-2016-0172883 20161216
- 主分类号: H01L27/092
- IPC分类号: H01L27/092 ; H01L29/06 ; H01L21/8234 ; H01L29/41 ; H01L29/66 ; H01L29/775 ; H01L21/8238 ; H01L27/088 ; H01L29/423 ; H01L29/165 ; H01L29/20 ; H01L29/78
摘要:
A semiconductor device includes a first transistor in a first region and a second transistor in a second region. The first transistor includes: a first nanowire, a first gate electrode, a first gate dielectric layer, a first source/drain region, and an inner-insulating spacer. The first nanowire has a first channel region. The first gate electrode surrounds the first nanowire. The first gate dielectric layer is between the first nanowire and the first gate electrode. The first source/drain region is connected to an edge of the first nanowire. The inner-insulating spacer is between the first gate dielectric layer and the first source/drain region. The second transistor includes a second nanowire, a second gate electrode, a second gate dielectric layer, and a second source/drain region. The second nanowire has a second channel region. The second gate electrode surrounds the second nanowire. The second gate dielectric layer is between the second nanowire and the second gate electrode. The second source/drain region is connected to an edge of the second nanowire.