Invention Grant
- Patent Title: Vertical vacuum channel transistor
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Application No.: US15693952Application Date: 2017-09-01
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Publication No.: US10431682B2Publication Date: 2019-10-01
- Inventor: Qing Liu , Ruilong Xie , Chun-chen Yeh
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES, INC. , STMicroelectronics, Inc.
- Applicant Address: US NY Armonk US TX Coppell KY
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,STMICROELECTRONICS, INC.,GLOBALFOUNDRIES, INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,STMICROELECTRONICS, INC.,GLOBALFOUNDRIES, INC.
- Current Assignee Address: US NY Armonk US TX Coppell KY
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/306 ; H01L21/02 ; H01L21/324 ; H01L29/417
Abstract:
A method of fabricating features of a vertical transistor include performing a first etch process to form a first portion of a fin in a substrate; depositing a spacer material on sidewalls of the first portion of the fin; performing a second etch process using the spacer material as a pattern to elongate the fin and form a second portion of the fin in the substrate, the second portion having a width that is greater than the first portion; oxidizing a region of the second portion of the fin beneath the spacer material to form an oxidized channel region; and removing the oxidized channel region to form a vacuum channel.
Public/Granted literature
- US20180102433A1 VERTICAL VACUUM CHANNEL TRANSISTOR Public/Granted day:2018-04-12
Information query
IPC分类:
