Invention Grant
- Patent Title: Semiconductor device, array substrate and method for fabricating semiconductor device
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Application No.: US15767605Application Date: 2017-09-22
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Publication No.: US10431701B2Publication Date: 2019-10-01
- Inventor: Jianming Sun , Rui Huang , Huili Wu
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: CN201710146018 20170313
- International Application: PCT/CN2017/102862 WO 20170922
- International Announcement: WO2018/166166 WO 20180920
- Main IPC: H01L31/02
- IPC: H01L31/02 ; H01L31/0224 ; G06K9/00 ; H01L31/105 ; H01L31/101 ; H01L31/18 ; H01L29/786 ; H01L27/144

Abstract:
The present disclosure relates to a semiconductor device, an array substrate, and a method for fabricating the semiconductor device. The semiconductor device comprises a substrate, a thin film transistor formed on the substrate, and a first light detection structure adjacent to the thin film transistor, wherein the first light detection structure includes a first bottom electrode, a top electrode, and a first photo-sensing portion disposed between the first bottom electrode and the first top electrode, one of a source electrode and a drain electrode of the thin film transistor is disposed in the same layer as the first bottom electrode of the first light detection structure; the other of the source electrode and the drain electrode of the thin film transistor is used as the first top electrode.
Public/Granted literature
- US20190044007A1 Semiconductor Device, Array Substrate And Method For Fabricating Semiconductor Device Public/Granted day:2019-02-07
Information query
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