公开(公告)号：US10784305B2

公开(公告)日：2020-09-22

申请号：US15768229

申请日：2017-09-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Rui Huang ,  Jianming Sun

IPC: H01L27/146 ,  G01T1/20 ,  H01L29/66 ,  H01L29/786

Abstract: The present application discloses a photodiode structure including multiple light trapping elements. Each light trapping element includes an N-type silicon layer with a recessed structure therein, an intrinsic silicon layer disposed overlying the N-type silicon layer including a side region and a bottom region inside the recessed structure, and a P-type silicon layer disposed as an inner layer overlying the intrinsic silicon layer inside the recessed structure. A radial PIN junction is formed around a nominal axis of the recessed structure.

公开(公告)号：US20240103328A1

公开(公告)日：2024-03-28

申请号：US17765769

申请日：2021-06-29

Applicant: BOE Technology Group Co., Ltd.

Inventor： Zhen Zhang ,  Fuqiang Li ,  Zhenyu Zhang ,  Yunping Di ,  Lizhong Wang ,  Zheng Fang ,  Jiahui Han ,  Yawei Wang ,  Chenyang Zhang ,  Chengfu Xu ,  Ce Ning ,  Pengxia Liang ,  Feihu Zhou ,  Xianqin Meng ,  Weiting Peng ,  Qiuli Wang ,  Binbin Tong ,  Rui Huang ,  Tianmin Zhou ,  Wei Yang

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L27/12

CPC classification number: G02F1/1368 ,  G02F1/136286 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259

Abstract: A displaying base plate and a manufacturing method thereof, and a displaying device. The displaying base plate includes a substrate, and a first electrode layer disposed on one side of the substrate, wherein the first electrode layer includes a first electrode pattern; a first planarization layer disposed on one side of the first electrode layer that is away from the substrate, wherein the first planarization layer is provided with a through hole, and the through hole penetrates the first planarization layer, to expose the first electrode pattern; and a second electrode layer, a second planarization layer and a third electrode layer that are disposed in stack on one side of the first planarization layer that is away from the substrate, wherein the second electrode layer is disposed closer to the substrate, the second electrode layer is connected to the first electrode pattern and the third electrode layer.

公开(公告)号：US11469336B2

公开(公告)日：2022-10-11

申请号：US16958120

申请日：2020-01-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jianhua Du ,  Chao Li ,  Zhaohui Qiang ,  Yupeng Gao ,  Feng Guan ,  Rui Huang ,  Zhi Wang ,  Yang Lv ,  Chao Luo

IPC: H01L31/0224 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/20

Abstract: The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.

公开(公告)号：US11327380B2

公开(公告)日：2022-05-10

申请号：US17263984

申请日：2020-05-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Shi Shu ,  Xiang Li ,  Chuanxiang Xu ,  Yong Yu ,  Haitao Huang ,  Yang Yue ,  Qi Yao ,  Rui Huang ,  Ge Shi ,  Kang Guo

IPC: G02F1/1368 ,  G02F1/1362

Abstract: An array substrate, a display panel and a display device are provided. The array substrate includes, a base substrate, a thin film transistor layer, a first passivation layer, a quantum dot layer, a color filter layer, a planarization layer and a metal wire grid polarizing layer that are sequentially disposed on the base substrate. The quantum dot layer is located in a display region of the array substrate, and an orthographic projection of the color filter layer on the base substrate is within an orthographic projection of the color filter layer on the base substrate.

公开(公告)号：US11296246B2

公开(公告)日：2022-04-05

申请号：US16487823

申请日：2019-02-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Rui Huang

IPC: H01L31/0232 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0224

Abstract: The present disclosure relates to a photosensitive component, a detection substrate and a method for manufacturing the detection substrate. The photosensitive component includes: a first electrode layer, a photoelectric conversion layer, a second electrode layer, an insulating layer and a reflective layer. The photoelectric conversion layer is located on the first electrode layer. The second electrode layer is located on a surface of the photoelectric conversion layer away from the first electrode layer. The insulating layer covers side surfaces of the photoelectric conversion layer and at least a part of a surface of the second electrode layer away from the photoelectric conversion layer, and the insulating layer includes a transparent material. The reflective layer covers the insulating layer, and the reflective layer is configured to reflect at least a part of light entering the insulating layer to the side surfaces of the photoelectric conversion layer.

公开(公告)号：US20210336071A1

公开(公告)日：2021-10-28

申请号：US16487823

申请日：2019-02-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Rui Huang

IPC: H01L31/0232 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/02

Abstract: The present disclosure relates to a photosensitive component, a detection substrate and a method for manufacturing the detection substrate. The photosensitive component includes: a first electrode layer, a photoelectric conversion layer, a second electrode layer, an insulating layer and a reflective layer. The photoelectric conversion layer is located on the first electrode layer. The second electrode layer is located on a surface of the photoelectric conversion layer away from the first electrode layer. The insulating layer covers side surfaces of the photoelectric conversion layer and at least a part of a surface of the second electrode layer away from the photoelectric conversion layer, and the insulating layer includes a transparent material. The reflective layer covers the insulating layer, and the reflective layer is configured to reflect at least a part of light entering the insulating layer to the side surfaces of the photoelectric conversion layer.

公开(公告)号：US20210050469A1

公开(公告)日：2021-02-18

申请号：US16812764

申请日：2020-03-09

Applicant: BOE Technology Group Co.,Ltd.

Inventor： Tianmin Zhou ,  Rui Huang ,  Lizhong Wang ,  Jipeng Song ,  Tao Yang ,  Zhaohui Qiang

IPC: H01L31/11 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0392

Abstract: A photosensitive device, a manufacturing method thereof, a detection substrate and an array substrate are provided. The photosensitive device is formed on a substrate, and it includes a photosensitive element and a thin film transistor. The photosensitive element includes a first electrode layer on the substrate; a second electrode layer on a side of the first electrode layer distal to the substrate; and a photoelectric conversion layer between the first electrode layer and the second electrode layer. The thin film transistor is electrically connected to the photosensitive element, and it includes a first gate electrode on the substrate; an active layer on a side of the first gate electrode distal to the substrate; and a second gate electrode on a side of the active layer distal to the substrate. The first electrode layer and the second gate electrode are located in the same layer.

公开(公告)号：US10431701B2

公开(公告)日：2019-10-01

申请号：US15767605

申请日：2017-09-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jianming Sun ,  Rui Huang ,  Huili Wu

IPC: H01L31/02 ,  H01L31/0224 ,  G06K9/00 ,  H01L31/105 ,  H01L31/101 ,  H01L31/18 ,  H01L29/786 ,  H01L27/144

Abstract: The present disclosure relates to a semiconductor device, an array substrate, and a method for fabricating the semiconductor device. The semiconductor device comprises a substrate, a thin film transistor formed on the substrate, and a first light detection structure adjacent to the thin film transistor, wherein the first light detection structure includes a first bottom electrode, a top electrode, and a first photo-sensing portion disposed between the first bottom electrode and the first top electrode, one of a source electrode and a drain electrode of the thin film transistor is disposed in the same layer as the first bottom electrode of the first light detection structure; the other of the source electrode and the drain electrode of the thin film transistor is used as the first top electrode.

公开(公告)号：US12235557B2

公开(公告)日：2025-02-25

申请号：US17765769

申请日：2021-06-29

Applicant: BOE Technology Group Co., Ltd.

Inventor： Zhen Zhang ,  Fuqiang Li ,  Zhenyu Zhang ,  Yunping Di ,  Lizhong Wang ,  Zheng Fang ,  Jiahui Han ,  Yawei Wang ,  Chenyang Zhang ,  Chengfu Xu ,  Ce Ning ,  Pengxia Liang ,  Feihu Zhou ,  Xianqin Meng ,  Weiting Peng ,  Qiuli Wang ,  Binbin Tong ,  Rui Huang ,  Tianmin Zhou ,  Wei Yang

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L27/12

Abstract: A displaying base plate and a manufacturing method thereof, and a displaying device. The displaying base plate includes a substrate, and a first electrode layer disposed on one side of the substrate, wherein the first electrode layer includes a first electrode pattern; a first planarization layer disposed on one side of the first electrode layer that is away from the substrate, wherein the first planarization layer is provided with a through hole, and the through hole penetrates the first planarization layer, to expose the first electrode pattern; and a second electrode layer, a second planarization layer and a third electrode layer that are disposed in stack on one side of the first planarization layer that is away from the substrate, wherein the second electrode layer is disposed closer to the substrate, the second electrode layer is connected to the first electrode pattern and the third electrode layer.

公开(公告)号：US11996413B2

公开(公告)日：2024-05-28

申请号：US17413221

申请日：2020-06-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhaohui Qiang ,  Li Qiang ,  Chao Luo ,  Huiqin Zhang ,  Rui Huang ,  Zhi Wang

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1368 ,  H10K59/121

CPC classification number: H01L27/1222 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/78696 ,  G02F1/13624 ,  G02F1/1368 ,  H10K59/1213

Abstract: A thin film transistor includes a base, a first electrode, an active pattern, a gate insulating layer, a gate and a second electrode. The active pattern includes a first semiconductor pattern, a second semiconductor pattern and a third semiconductor pattern. A material of one of the first semiconductor pattern and the third semiconductor pattern includes a semiconductor material and N-type doped ions, and a material of another of the first semiconductor pattern and the third semiconductor pattern includes the semiconductor material and P-type doped ions. An orthogonal projection of the gate on the base is non-overlapping with an orthogonal projection of the active pattern on the base.