Invention Grant
- Patent Title: Monolithically integrated photodetector and receiver
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Application No.: US15560649Application Date: 2015-04-30
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Publication No.: US10431707B2Publication Date: 2019-10-01
- Inventor: Cheng Li , Zhihong Huang , Marco Fiorentino , Raymond G. Beausoleil
- Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: Hewlett Packard Enterprise Patent Department
- International Application: PCT/US2015/028483 WO 20150430
- International Announcement: WO2016/175828 WO 20161103
- Main IPC: H01L31/10
- IPC: H01L31/10 ; H01L31/107 ; H04B10/00 ; H01L25/04 ; H01L27/146 ; H04B10/69

Abstract:
An example device in accordance with an aspect of the present disclosure includes an avalanche photodetector to enable carrier multiplication for increased responsivity, and a receiver based on source-synchronous CMOS and including adaptive equalization. The photodetector and receiver are monolithically integrated on a single chip.
Public/Granted literature
- US20180097139A1 MONOLITHICALLY INTEGRATED PHOTODETECTOR AND RECEIVER Public/Granted day:2018-04-05
Information query
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