- 专利标题: Nitride underlayer and fabrication method thereof
-
申请号: US15859493申请日: 2017-12-30
-
公开(公告)号: US10431713B2公开(公告)日: 2019-10-01
- 发明人: Wen-yu Lin , Shengchang Chen , Zhibai Zhong , Chen-ke Hsu
- 申请人: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 申请人地址: CN Xiamen
- 专利权人: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人地址: CN Xiamen
- 代理机构: Syncoda LLC
- 代理商 Feng Ma
- 优先权: CN201510921684 20151214
- 主分类号: H01L29/84
- IPC分类号: H01L29/84 ; H01L21/00 ; H01L33/00 ; H01L33/12 ; C23C14/06 ; C23C14/58 ; C23C16/02 ; C23C28/04 ; H01L21/02 ; C23C14/34 ; C23C16/30 ; H01L33/32
摘要:
A nitride underlayer structure includes a sputtered AlN buffer layer with open band-shaped holes, thus providing a stress release path before the nitride film is grown over the buffer layer. A light-emitting diode with such nitride underlayer structure has improved lattice quality of the nitride underlayer structure and the problem of surface cracks is resolved. A fabrication method of the nitride underlayer includes providing a substrate and forming a band-shaped material layer over the substrate; sputtering an AlN material layer over the band-shaped material layer and the substrate to form a flat film; scanning back and forth from the substrate end with a laser beam to decompose the band-shaped material layer to form a sputtered AlN buffer layer with flat surface and band-shaped holes inside; and forming an AlxIn1-x-yGayN layer (0≤x≤1, 0≤y≤1) over the sputtered AlN buffer layer.
公开/授权文献
- US20180122635A1 Nitride Underlayer and Fabrication Method Thereof 公开/授权日:2018-05-03