Invention Grant
- Patent Title: Quantum dot composite material and manufacturing method and application thereof
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Application No.: US15362120Application Date: 2016-11-28
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Publication No.: US10436973B2Publication Date: 2019-10-08
- Inventor: Hung-Chia Wang , Xue-Jie Zhang , Shin-Ying Lin , An-Cih Tang , Ru-Shi Liu , Tzong-Liang Tsai , Yu-Chun Lee , Ching-Yi Chen , Hung-Chun Tong
- Applicant: Lextar Electronics Corporation
- Applicant Address: TW Hsinchu
- Assignee: LEXTAR ELECTRONICS CORPORATION
- Current Assignee: LEXTAR ELECTRONICS CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW105132612A 20161007
- Main IPC: F21V8/00
- IPC: F21V8/00 ; C09K11/66 ; H01L25/075 ; H01L33/50 ; H01L33/56 ; H01L33/62 ; C09K11/02 ; B82Y20/00 ; B82Y40/00
Abstract:
A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0≤a≤1, 0≤b≤1.
Public/Granted literature
- US20170153382A1 QUANTUM DOT COMPOSITE MATERIAL AND MANUFACTURING METHOD AND APPLICATION THEREOF Public/Granted day:2017-06-01
Information query
