A self-limiting etch is used to provide a semiconductor base located between a semiconductor substrate and a semiconductor fin. The semiconductor base has an upper portion, a lower portion and a midsection. The midsection has a narrower width than the lower and upper portions. A bottom source/drain structure is grown from surfaces of the semiconductor substrate and the semiconductor base. The bottom source/drain structure has a tip region that contacts the midsection of the semiconductor base. The bottom source/drain structures on each side of the semiconductor fin are in close proximity to each other and they have increased volume. Reduced access resistance may also be achieved since the bottom source/drain structure has increased volume.