Invention Grant
- Patent Title: Reference voltage generator and semiconductor device including the same
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Application No.: US16191367Application Date: 2018-11-14
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Publication No.: US10439632B2Publication Date: 2019-10-08
- Inventor: Anil Kavala , Seon-kyoo Lee , Byung-hoon Jeong , Jeong-don Ihm , Young-don Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSING ELECTRONICS CO., LTD.
- Current Assignee: SAMSING ELECTRONICS CO., LTD.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2017-0153967 20171117
- Main IPC: G05F3/08
- IPC: G05F3/08 ; H03M1/78 ; G11C5/14

Abstract:
A semiconductor device includes a reference voltage generator configured to output a reference voltage. The reference voltage generator includes a boosting code circuit and a first digital-analog converter (DAC). The boosting code circuit includes a first boosting pulse generator configured to generate a first boosting pulse and a first boosting code controller configured to output a first boosting code based on a reference code and the first boosting pulse. The first DAC is configured to output the reference voltage by converting the first boosting code. The first boosting code has a first code value different from the reference code when the first boosting pulse has a first logic level, and the first boosting code has the same value as the reference code when the first boosting pulse has a second logic level opposite to the first logic level.
Public/Granted literature
- US20190158109A1 REFERENCE VOLTAGE GENERATOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2019-05-23
Information query
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