Invention Grant
- Patent Title: Multiple concurrent modulation schemes in a memory system
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Application No.: US15977815Application Date: 2018-05-11
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Publication No.: US10446198B2Publication Date: 2019-10-15
- Inventor: Robert Nasry Hasbun , Timothy M. Hollis , Jeffrey P. Wright , Dean D. Gans
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G06F1/3234 ; G06F13/42 ; G11C11/22 ; G11C11/4093

Abstract:
Methods, systems, and devices for multiple concurrent modulation schemes in a memory system are described. Techniques are provided herein to communicate data using a modulation scheme having at least three levels and using a modulation scheme having at least two levels within a common system or memory device. Such communication with multiple modulation schemes may be concurrent. The modulated data may be communicated to a memory die through distinct signal paths that may correspond to a particular modulation scheme. An example of a modulation scheme having at least three levels may be pulse amplitude modulation (PAM) and an example of a modulation scheme having at least two levels may be non-return-to-zero (NRZ).
Public/Granted literature
- US20190103143A1 MULTIPLE CONCURRENT MODULATION SCHEMES IN A MEMORY SYSTEM Public/Granted day:2019-04-04
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