Invention Grant
- Patent Title: Pseudo single pass NAND memory programming
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Application No.: US15717835Application Date: 2017-09-27
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Publication No.: US10446238B2Publication Date: 2019-10-15
- Inventor: Aliasgar S. Madraswala , Xin Guo , David B. Carlton , Purval S. Sule
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/26 ; G11C16/10

Abstract:
Embodiments include apparatuses, methods, and computer devices including a multi-level NAND memory array and a memory controller coupled to the multi-level NAND memory array. The multi-level NAND memory array may include a first word line and a second word line. The memory controller may receive a first page of data and a second page of data together with a program command to program the first page of data and the second page of data into the multi-level NAND memory array. The memory controller may program the first page of data into a page of the first word line via a first pass, and further program the second page of data into a page of the second word line via a second pass, subsequent to the first pass. Other embodiments may also be described and claimed.
Public/Granted literature
- US20190096490A1 PSEUDO SINGLE PASS NAND MEMORY PROGRAMMING Public/Granted day:2019-03-28
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