Invention Grant
- Patent Title: Integrated circuit product having a through-substrate-via (TSV) and a metallization layer that are formed after formation of a semiconductor device
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Application No.: US15877549Application Date: 2018-01-23
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Publication No.: US10446443B2Publication Date: 2019-10-15
- Inventor: Himani Suhag Kamineni , Vimal Kumar Kamineni , Daniel Smith , Maxwell Lippitt
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/768 ; H01L21/306 ; H01L23/532 ; H01L29/423 ; H01L29/417 ; H01L23/485 ; H01L23/522

Abstract:
An integrated circuit product includes a substrate, an interlayer dielectric (ILD) material positioned above the substrate and a through-substrate-via (TSV) extending continuously through the substrate and the ILD material. The TSV includes a substrate portion of the TSV that is positioned in and extends continuously through the substrate and an ILD portion of the TSV that is positioned in and extends continuously through the ILD. An insulating liner layer is selectively positioned between and separates the substrate portion of the TSV and the substrate, wherein the selectively positioned insulating liner layer does not extend from the substrate to the ILD material.
Public/Granted literature
Information query
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