- 专利标题: Metal-insulator-metal capacitors with enlarged contact areas
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申请号: US15872589申请日: 2018-01-16
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公开(公告)号: US10446483B2公开(公告)日: 2019-10-15
- 发明人: Sipeng Gu , Jianwei Peng , Xusheng Wu , Yi Qi , Jeffrey Chee
- 申请人: GLOBALFOUNDRIES Inc.
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Thompson Hine LLP
- 代理商 Anthony Canale
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L49/02 ; H01L21/768
摘要:
Structures that include a metal-insulator-metal (MIM) capacitor and methods for fabricating a structure that includes a MIM capacitor. The MIM capacitor includes a first electrode, a second electrode, and a third electrode. A conductive via is arranged in a via opening extending in a vertical direction through at least the first electrode. The first electrode has a surface arranged inside the via opening in a plane transverse to the vertical direction, and the conductive via contacts the first electrode over an area of the surface.
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