Invention Grant
- Patent Title: Metal-insulator-metal capacitors with enlarged contact areas
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Application No.: US15872589Application Date: 2018-01-16
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Publication No.: US10446483B2Publication Date: 2019-10-15
- Inventor: Sipeng Gu , Jianwei Peng , Xusheng Wu , Yi Qi , Jeffrey Chee
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L49/02 ; H01L21/768

Abstract:
Structures that include a metal-insulator-metal (MIM) capacitor and methods for fabricating a structure that includes a MIM capacitor. The MIM capacitor includes a first electrode, a second electrode, and a third electrode. A conductive via is arranged in a via opening extending in a vertical direction through at least the first electrode. The first electrode has a surface arranged inside the via opening in a plane transverse to the vertical direction, and the conductive via contacts the first electrode over an area of the surface.
Public/Granted literature
- US20190221515A1 METAL-INSULATOR-METAL CAPACITORS WITH ENLARGED CONTACT AREAS Public/Granted day:2019-07-18
Information query
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