Invention Grant
- Patent Title: Memory cells and integrated structures
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Application No.: US15975902Application Date: 2018-05-10
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Publication No.: US10446574B2Publication Date: 2019-10-15
- Inventor: Chris M. Carlson
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/1157 ; H01L21/28 ; G11C16/04 ; G11C16/16
Abstract:
A memory cell comprises, in the following order, channel material, a charge-passage structure, charge-storage material, a charge-blocking region, and a control gate. The charge-passage structure comprises a first material closest to the channel material, a third material furthest from the channel material, and a second material between the first material and the third material. Dielectric constant (k) of the first material is less than 5.0. Sum of bandgap (BG) and electron affinity (chi) of the second material is no greater than 6.7 eV. The k of the second material is at least 5.0. Sum of BG and chi of the third material is less than 9.0 eV and at least 0.5 eV greater than the sum of the BG and the chi of the second material.
Public/Granted literature
- US20180269227A1 Memory Cells and Integrated Structures Public/Granted day:2018-09-20
Information query
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