Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16121567Application Date: 2018-09-04
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Publication No.: US10446663B2Publication Date: 2019-10-15
- Inventor: Tan-Ya Yin , Chia-Wei Huang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW106113554A 20170424
- Main IPC: H01L31/119
- IPC: H01L31/119 ; H01L29/66 ; H01L29/78 ; H01L29/423 ; H01L21/308 ; H01L29/06
Abstract:
A semiconductor device is provided. The semiconductor device includes a substrate and a patterned metal gate layer. The substrate includes a first fin segment and a second fin segment respectively protruding from a top surface of the substrate. The first fin segment and the second fin segment respectively extend along a first direction and are arranged along a second direction, the first fin segment comprises a first fin structure at an end of the first fin segment, and the second fin segment comprises a first recess at an end of the second fin segment, and the first recess and the first fin structure are arranged along the second direction. The patterned metal gate layer is disposed on the substrate, and the patterned metal gate layer covers the first fin structure.
Public/Granted literature
- US20190013394A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-01-10
Information query
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