Invention Grant
- Patent Title: Lateral insulated gate bipolar transistor and method of eliminating the transistor tail current
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Application No.: US16021046Application Date: 2018-06-28
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Publication No.: US10446673B2Publication Date: 2019-10-15
- Inventor: Junhong Li
- Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
- Applicant Address: CN Chengdu
- Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
- Current Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
- Current Assignee Address: CN Chengdu
- Agent Gokalp Bayramoglu
- Priority: CN201510998522 20151228; CN201510999925 20151228
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/739 ; H01L29/08 ; H01L29/78 ; H01L29/40

Abstract:
A lateral insulated gate bipolar transistor (LIGBT) and method for eliminating the transistor tail current. The lateral insulated gate bipolar transistor comprises the silicon substrate, the buried oxide, and the drift region, the channel region, ohm-contact-high-doping region, the cathode, the gate dielectric, the anode contact, the gate, the cathode contact, the anode, which are placed above the silicon substrate, the electric field intensifier is placed at the upper surface of the drift region between the anode and the channel region to generate an electric field that starts from anode and points to the bottom surface of the electric field intensifier. The electric field intensifier is isolated from the drift region by the dielectric. The invention realizes performance improvements for both the conduction and the switching behaviors of the LIGBT device.
Public/Granted literature
- US20180308962A1 Lateral Insulated Gate Bipolar Transistor And Method Of Eliminating The Transistor Tail Current Public/Granted day:2018-10-25
Information query
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